Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length-Reference-Cited by-同舟云学术

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Novel Nickel-Alloy Silicides for Source/Drain Contact Resistance Reduction in N-Channel Multiple-Gate Transistors with Sub-35nm Gate Length

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
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Author:

Lee Rinus T. P.,Liow Tsung-Yang,Tan Kian-Ming,Lim Andy Eu-Jin,Wong Hoong-Shing,Lim Poh-Chong,Lai Doreen M. Y.,Lo Guo-Qiang,Tung Chih-Hang,Samudra Ganesh,Chi Dong-Zhi,Yeo Yee-Chia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154350.pdf?arnumber=4154350

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improved Current Drivability for Sub-20-nm N-FinFETs by Ge Pre-Amorphization in Contact With Reverse Retrograde Profile;IEEE Electron Device Letters;2017-03

2. A Modified Scheme to Reduce the Specific Contact Resistivity of NiSi/Si Contacts by Means of Dopant Segregation Technique;ECS Journal of Solid State Science and Technology;2017

3. Work function engineering in silicides: Chlorine doping in NiSi;Journal of Applied Physics;2011-04-15

4. Ultimately Low Schottky Barrier Height at NiSi/Si Junction by Sulfur Implantation after Silicidation for Aggressive Scaling of MOSFETs;MRS Proceedings;2009

5. Material and Electrical Characterization of Nickel Silicide-Carbon as Contact Metal to Silicon-Carbon Source and Drain Stressors;MRS Proceedings;2007

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