Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors-Reference-Cited by-同舟云学术

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Performance and Variability Comparisons between Multi-Gate FETs and Planar SOI Transistors

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
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Author:

Thean A. V-Y,Shi Z-H,Mathew L.,Stephens T.,Desjardin H.,Parker C.,White T.,Stoker M.,Prabhu L.,Garcia R.,Nguyen B-Y.,Murphy S.,Rai R.,Conner J.,White B. E.,Venkatesan S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154358.pdf?arnumber=4154358

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Bulk FinFETs with body spacers for improving fin height variation;Solid-State Electronics;2016-08

2. Fabrication Variability in Multiple Gate MOSFETs: A Bulk FinFET Study;ECS Journal of Solid State Science and Technology;2016

3. Fully Depletion of Advanced Silicon on Insulator MOSFETs;Critical Reviews in Solid State and Materials Sciences;2015-02-18

4. Bit-Error and Soft-Error Resilient 7T/14T SRAM with 150-nm FD-SOI Process;IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences;2012

5. Discrete Dopant Effects on Threshold Voltage Variation in Double-Gate and Gate-All-Around Metal-Oxide-Semiconductor Field-Effect-Transistors;Key Engineering Materials;2011-02

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