Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage-Reference-Cited by-同舟云学术

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Improved intermodulation distortion profile of AlGaN/GaN HEMT at high drain bias voltage

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Nagahara M.,Kikkawa T.,Adachi N.,Tateno Y.,Kato S.,Yokoyama M.,Yokogawa S.,Kimura T.,Yamaguchi Y.,Hara N.,Joshin K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175933.pdf?arnumber=1175933

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High linearity AlGaN/GaN HEMTs with Au-free Ti/Al/Ni/Ti ohmic contacts for Ka-band applications;Applied Physics Express;2024-07-01

2. Improvement of AlGaN/GaN HEMTs Linearity Using Etched-Fin Gate Structure for Ka Band Applications;Micromachines;2023-04-25

3. A Novel Concept of using Double Threshold Voltage Coupling to Improve the linearity of AlGaN/GaN HEMTs for millimeter-wave applications;2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA);2022-10-28

4. Surface Passivation Effects on AlGaN/GaN High Electron Mobility Transistors with SiO2;Sensor Letters;2011-12-01

5. Power added efficiency and linearity tradeoffs in GaN and GaAs microwave power HEMTs;Solid-State Electronics;2010-03

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