Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node-Reference-Cited by-同舟云学术

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Extendibility of NiPt Silicide Contacts for CMOS Technology Demonstrated to the 22-nm Node

Published:2007-12 Issue: Volume: Page:
ISSN:
Container-title:2007 IEEE International Electron Devices Meeting
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Author:

Ohuchi Kazuya,Lavoie Christian,Murray Conal,D'Emic Chris,Lauer Isaac,Chu Jack O.,Yang Bin,Besser Paul,Gignac Lynne,Bruley John,Singco Gilbert U.,Pagette Francois,Topol Anna W.,Rooks Michael J.,Bucchignano James J.,Narayanan Vijay,Khare Mukesh,Takayanagi Mariko,Ishimaru Kazunari,Park Dae-Gyu,Shahidi Ghavam,Solomon Paul

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4418847/4418848/04418888.pdf?arnumber=4418888

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AC Device Variability in High- $\kappa$ Metal-Gate CMOS Technology;IEEE Electron Device Letters;2019-01

2. Downscaling Metal—Oxide Thin-Film Transistors to Sub-50 nm in an Exquisite Film-Profile Engineering Approach;IEEE Transactions on Electron Devices;2017-03

3. Evaluating Work-Function and Composition of ErSixon Various Surface Orientation of Silicon;ECS Journal of Solid State Science and Technology;2016

4. NiPt silicide agglomeration accompanied by stress relaxation in NiSi(010) ∥ Si(001) grains;Japanese Journal of Applied Physics;2015-03-25

5. Metal silicides in advanced complementary metal-oxide-semiconductor (CMOS) technology;Metallic Films for Electronic, Optical and Magnetic Applications;2014

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