Novel collector design for high-speed SiGe:C HBTs

Author:

Heinemann B.,Rucker H.,Barth R.,Bauer J.,Bolze D.,Bugiel E.,Drews J.,Ehwald K.-E.,Grabolla T.,Haak U.,Hoppner W.,Knoll D.,Kruger D.,Kuck B.,Kurps R.,Marschmeyer M.,Richter H.H.,Schley P.,Schmidt D.,Scholz R.,Tillack B.,Winkler W.,Wolnsky D.,Wulf H.-E.,Yamamoto Y.,Zaumseil P.

Publisher

IEEE

Cited by 56 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Heterojunction bipolar transistor featuring a stressed implanted collector: Defects formation and impact on functionality;Microelectronics Reliability;2022-12

2. SiGe:C BiCMOS Technologies for Automotive Radar Applications;ECS Transactions;2019-12-18

3. Device Architectures for High-speed SiGe HBTs;2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS);2019-11

4. Single-Event Upset Mitigation in a Complementary SiGe HBT BiCMOS Technology;IEEE Transactions on Nuclear Science;2018-01

5. Bipolar latch with compensated keep‐alive current;The Journal of Engineering;2015-03

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