Device Architectures for High-speed SiGe HBTs-Reference-Cited by-同舟云学术

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Device Architectures for High-speed SiGe HBTs

Published:2019-11 Issue: Volume: Page:
ISSN:
Container-title:2019 IEEE BiCMOS and Compound semiconductor Integrated Circuits and Technology Symposium (BCICTS)
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Author:

Rucker H.,Heinemann B.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8961327/8972708/08972757.pdf?arnumber=8972757

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Current Trends in VCO-Based EPR;Applied Magnetic Resonance;2024-08-19

2. A 200-Gb/s 70-GHz-bandwidth 2:1 analog multiplexer in 130-nm SiGe BiCMOS process;IEICE Electronics Express;2024-08-10

3. A 200-Gb/s 70-GHz-bandwidth 2:1 analog multiplexer in 130-nm SiGe BiCMOS process;IEICE ELECTRON EXPR;2024

4. Terahertz power enhancement by combining photocurrent from arrayed UTC-PDs using Wilkinson power combiner;Japanese Journal of Applied Physics;2024-04-01

5. Enabling Applications of Electromagnetic Waves at 0.3–1.0 THz Using Silicon Electronic Integrated Circuits;ACS Photonics;2024-03-19

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