Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM-Reference-Cited by-同舟云学术

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Novel shallow trench isolation process using flowable oxide CVD for sub-100 nm DRAM

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Container-title:Digest. International Electron Devices Meeting,
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Author:

Sung-Woong Chung ,Sang-Tae Ahn ,Hyun-Chul Sohn ,Jachun Ku ,Sungki Park ,Yong-Wook Song ,Hyo-Sik Park ,Sang-Don Lee

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/8330/25999/01175820.pdf?arnumber=1175820

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of Annealing Temperature and Pressure on the Nitride-based Precursor Conversion Behaviors;ECS Journal of Solid State Science and Technology;2020-03-20

2. Highly Manufacturable Device Isolation Technology Using Laser-Induced Epitaxial Growth for Monolithic Stack Devices;IEEE Transactions on Electron Devices;2011-11

3. Study on Fluorine Incorporation during Etch Step for HDP-CVD Oxide Gap-Filling of Nano-Scale Shallow-Trench Isolation;Journal of the Korean Physical Society;2008-09-12

4. Effect of Fluorine on Characteristics of Shallow Trench Isolation Prepared Using High-Density Plasma Chemical Vapor Deposition Including NF3Chemistry;Japanese Journal of Applied Physics;2006-03-08

5. Novel Shallow Trench Isolation Process from Viewpoint of Total Strain Process Design for 45 nm Node Devices and Beyond;Japanese Journal of Applied Physics;2005-04-21

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