Highly Manufacturable Device Isolation Technology Using Laser-Induced Epitaxial Growth for Monolithic Stack Devices-Reference-Cited by-同舟云学术

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Highly Manufacturable Device Isolation Technology Using Laser-Induced Epitaxial Growth for Monolithic Stack Devices

Published:2011-11 Issue:11 Volume:58 Page:3863-3868
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Son Yong-Hoon,Baik Seung Jae,Jeon Sanghun,Lee Jong-Wook,Hwang Gihyun,Shin Yoo Gyun,Yoon Euijoon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/6051730/06032734.pdf?arnumber=6032734

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. High Quality Vertical Silicon Channel by Laser-Induced Epitaxial Growth for Nanoscale Memory Integration;JSTS:Journal of Semiconductor Technology and Science;2014-04-30

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