Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection-Reference-Cited by-同舟云学术

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Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces - guiding principles for gate metal selection

Published:2005 Issue: Volume: Page:
ISSN:
Container-title:IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest.
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Author:

Shiraishi K.,Ahmet P.,Ohmori K.,Watanabe H.,Chikyow T.,Green M.L.,Nara Y.,Yamada K.,Akasaka Y.,Miyazaki S.,Nakayama T.,Nakaoka T.,Nakamura G.,Torii K.,Furutou H.,Ohta A.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/10701/33791/01609260.pdf?arnumber=1609260

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Changes in Schottky Barrier Height Behavior of Pt–Ru Alloy Contacts on Single-Crystal ZnO;NIMS Monographs;2020

2. Investigating doping effects on high-κ metal gate stack for effective work function engineering;Solid-State Electronics;2013-10

3. Schottky barrier height behavior of Pt–Ru alloy contacts on single-crystal n-ZnO;Journal of Applied Physics;2010-05-15

4. Decoupling the Fermi-level pinning effect and intrinsic limitations on p-type effective work function metal electrodes;Microelectronic Engineering;2008-01

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