Robust ternary metal gate electrodes for dual gate CMOS devices-Reference-Cited by-同舟云学术

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Robust ternary metal gate electrodes for dual gate CMOS devices

Published: Issue: Volume: Page:
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Container-title:International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
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Author:

Dae-Gyu Park ,Tae-Ho Cha ,Kwan-Yong Lim ,Heung-Jae Cho ,Tae-Kyun Kim ,Se-Aug Jang ,You-Seok Suh ,Veena Misra ,In-Seok Yeo ,Jae-Sung Roh ,Jin Won Park ,Hee-Koo Yoon

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7704/21092/00979597.pdf?arnumber=979597

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3. Complementary Metal–Oxide–Semiconductor Compatible Deposition of Nanoscale Transition-Metal Nitride Thin Films for Plasmonic Applications;ACS Applied Materials & Interfaces;2020-09-22

4. Tunable mid-infrared graphene-titanium nitride plasmonic absorber for chemical sensing applications;Journal of the Optical Society of America B;2019-09-26

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