High performance submicron inversion-type enhancement-mode InGaAs MOSFETs with ALD Al2O3, HfO2 and HfAlO as gate dielectrics
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/4418847/4418848/04419020.pdf?arnumber=4419020
Cited by 151 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08
2. Characterization of interface properties of Al2O3/n-GaSb and Al2O3/InAs/n-GaSb metal-oxide-semiconductor structures;Japanese Journal of Applied Physics;2022-05-25
3. Band alignment of atomic layer deposited MoS2/(HfO2) x (Al2O3)1−x heterojunctions for device applications;Journal of Physics D: Applied Physics;2022-03-03
4. Extensive Analysis on the Effects of Post-Deposition Annealing for ALD-Deposited Al2O3 on an n-Type Silicon Substrate;Materials;2021-06-16
5. Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET;Journal of Computational Electronics;2021-05-12
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