Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm<sup>2</sup> Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology-Reference-Cited by-同舟云学术

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Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm² Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
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Author:

Park Youngwoo,Choi Jungdal,Kang Changseok,Lee Changhyun,Shin Yuchoel,Choi Bonghyn,Kim Juhung,Jeon Sanghun,Sel Jongsun,Park Jintaek,Choi Kihwan,Yoo Taehwa,Sim Jaesung,Kim Kinam

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154319.pdf?arnumber=4154319

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dielectric breakdown of oxide films in electronic devices;Nature Reviews Materials;2024-08-07

2. Demonstration of β-Ga₂O₃ nonvolatile flash memory for oxide electronics;Japanese Journal of Applied Physics;2023-06-01

3. Recent Progress on 3D NAND Flash Technologies;Electronics;2021-12-18

4. Terahertz Imaging and Sensing Applications With Silicon-Based Technologies;IEEE Transactions on Terahertz Science and Technology;2019-01

5. Properties ofc-axis-aligned crystalline indium–gallium–zinc oxide field-effect transistors fabricated through a tapered-trench gate process;Japanese Journal of Applied Physics;2016-03-22

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