A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

A normally-off GaN FET with high threshold voltage uniformity using a novel piezo neutralization technique

Published:2009-12 Issue: Volume: Page:
ISSN:
Container-title:2009 IEEE International Electron Devices Meeting (IEDM)
language:
Short-container-title:

Author:

Ota K.,Endo K.,Okamoto Y.,Ando Y.,Miyamoto H.,Shimawaki H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5419306/5424206/05424398.pdf?arnumber=5424398

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simulation-Based DC and RF Performance Analysis of an Enhancement-Mode T-Gate Al0.15Ga0.85N/GaN/Al0.07Ga0.93N/GaN/Al0.05Ga0.95N MIS-HEMT Device on a GaN Substrate;Journal of Electronic Materials;2024-07-13

2. 18 A/1020 V p-GaN-gated HEMTs with Isosceles Trapezoidal-Shaped Multi-Finger Structure;ECS Journal of Solid State Science and Technology;2024-07-01

3. Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer;IEEE Transactions on Electron Devices;2024-05

4. Performance Analysis of an Enhancement Mode Operated AlGaN/GaN MIS-HEMT Device with Ga₂O₃ as a Back Barrier;2024 7th International Conference on Devices, Circuits and Systems (ICDCS);2024-04-23

5. Optimizing Back Barrier Material Composition and Thickness of Al_0.15Ga_0.85N/GaN/Al_xGa_1-xN MIS-HEMT Device Structure for High-Power Enhancement Mode Applications;2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE);2024-02-22

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP