High performance Hi-K + metal gate strain enhanced transistors on (110) silicon-Reference-Cited by-同舟云学术

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High performance Hi-K + metal gate strain enhanced transistors on (110) silicon

Published:2008-12 Issue: Volume: Page:
ISSN:
Container-title:2008 IEEE International Electron Devices Meeting
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Author:

Packan P.,Cea S.,Deshpande H.,Ghani T.,Giles M.,Golonzka O.,Hattendorf M.,Kotlyar R.,Kuhn K.,Murthy A.,Ranade P.,Shifren L.,Weber C.,Zawadzki K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4786613/4796592/04796614.pdf?arnumber=4796614

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations;npj Quantum Information;2024-05-31

2. Hole Mobility Boosters of (110)-Oriented Extremely Thin Body SiGe-on- Insulator (SGOI) pMOSFETs;IEEE Transactions on Electron Devices;2023-07

3. Novel Postgate Single Diffusion Break Integration in Gate-All-Around Nanosheet Transistors to Achieve Remarkable Channel Stress for N/P Current Matching;IEEE Transactions on Electron Devices;2022-03

4. Top-down fabrication and electrical characterization of Si and SiGe nanowires for advanced CMOS technologies;Semiconductor Science and Technology;2019-06-12

5. Effect of Macro-scale Mechanical Stress of Silicon Wafer on Room Temperature Photoluminescence Signals;Journal of Electronic Materials;2019-01-08

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