Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling-Reference-Cited by-同舟云学术

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Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

Published:2006 Issue: Volume: Page:
ISSN:
Container-title:2006 International Electron Devices Meeting
language:
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Author:

Cros Antoine,Romanjek Krunoslav,Fleury Dominique,Harrison Samuel,Cerutti Robin,Coronel Philippe,Dumont Benjamin,Pouydebasque Arnaud,Wacquez Romain,Duriez Blandine,Gwoziecki Romain,Boeuf Frederic,Brut Hugues,Ghibaudo Gerard,Skotnicki Thomas

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154291.pdf?arnumber=4154291

Cited by 26 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Characterization of Ultrathin FDSOI Stacks Using Low‐Field Mobility;physica status solidi (a);2022-05-29

4. Two-Dimensional Analytical Expression of Threshold Voltage for Un-doped Double Gate MOSFET;Lecture Notes in Networks and Systems;2021

5. Optimization of double metal-gate InAs/Si heterojunction nanowire TFET;Semiconductor Science and Technology;2020-06-22

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