A Normally-off AlGaN/GaN Transistor with RonA=2.6mΩcm2 and BVds=640V Using Conductivity Modulation
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Publisher
IEEE
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http://xplorestaging.ieee.org/ielx5/4154162/4139311/04154365.pdf?arnumber=4154365
Cited by 74 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT;IEEE Transactions on Electron Devices;2023-10
2. Normally-off AlN/GaN HEMTs with a DIBL of 1.15 mV/V for RF Applications;2023 18th European Microwave Integrated Circuits Conference (EuMIC);2023-09-18
3. Time-Resolved Extraction of Negatively Shifted Threshold Voltage in Schottky-Type p-GaN Gate HEMT Biased at High V DS;IEEE Transactions on Electron Devices;2023-07
4. Recessed-gate AlGaN/GaN MIS-FETs with dual 2DEG channels;Semiconductor Science and Technology;2022-12-29
5. Observation and Analysis of Anomalous V TH Shift of p-GaN Gate HEMTs Under off-State Drain Stress;IEEE Transactions on Electron Devices;2022-12
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