Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases-Reference-Cited by-同舟云学术

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Study of Mobility for HfO2 dielectric FDSOI-UTTB pMOS under substrate biases

Published:2016-10 Issue:10 Volume:14 Page:4235-4240
ISSN:1548-0992
Container-title:IEEE Latin America Transactions
language:
Short-container-title:IEEE Latin Am. Trans.

Author:

Trojman Lionel

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,General Computer Science

Link

http://xplorestaging.ieee.org/ielx7/9907/7786295/07786299.pdf?arnumber=7786299

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of Process Variability on Threshold Voltage in Vertically-Stacked Nanosheet TFET;Silicon;2023-03-04

2. Thermal behavior characterization for MOSFETs and BJTs in hazardous locations;Revista Internacional de Métodos Numéricos para Cálculos y Diseño en Ingeniería;2021

3. Studies of radiation effects in Al2O3-based metal-oxide-semiconductor structures induced by Si heavy ions;Journal of Applied Physics;2019-03-21

4. Investigation on High-κ Dielectric for Low Leakage AlGaN/GaN MIS-HEMT Device, Using Material Selection Methodologies;Semiconductors;2018-04

5. Voltage and oxide thickness dependent tunneling current density and tunnel resistivity model: Application to high-k material HfO2 based MOS devices;Superlattices and Microstructures;2017-11

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