Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors-Reference-Cited by-同舟云学术

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Implementation of the Density Gradient Quantum Corrections for 3-D Simulations of Multigate Nanoscaled Transistors

Published:2011-06 Issue:6 Volume:30 Page:841-851
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Garcia-Loureiro Antonio J.,Seoane Natalia,Aldegunde Manuel,Valin Raúl,Asenov Asen,Martinez Antonio,Kalna Karol

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

http://xplorestaging.ieee.org/ielx5/43/5768121/05768129.pdf?arnumber=5768129

Cited by 42 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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3. Impact of the channel shape, back oxide and gate oxide layers on self-heating in nanoscale JL FINFET;Nanosystems: Physics, Chemistry, Mathematics;2022-04-29

4. FinFET-Based Inverter Design and Optimization at 7 Nm Technology Node;Silicon;2022-03-19

5. Parallel approach of Schrödinger-based quantum corrections for ultrascaled semiconductor devices;Journal of Computational Electronics;2021-12-27

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