Development of planarizing spin-on carbon material for high-temperature processes-Reference-Cited by-同舟云学术

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Development of planarizing spin-on carbon material for high-temperature processes

Published:2021-03-14 Issue: Volume: Page:
ISSN:
Container-title:2021 China Semiconductor Technology International Conference (CSTIC)
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Author:

Huang Runhui,Zhong Xing-Fu,Koza Jakub,Xu Gu,Zhang Boyu,Simmons Sean

Funder

NUFAB facility of Northwestern University's NUANCE Center, which has received support from the SHyNE Resource

IIN, and Northwestern's MRSEC program

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9461249/9461251/09461452.pdf?arnumber=9461452

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1. Photoresist Material Gap Filling Loading Improvement from Pattern Density Perspective;2021 International Workshop on Advanced Patterning Solutions (IWAPS);2021-12-12

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