Photoresist Material Gap Filling Loading Improvement from Pattern Density Perspective
Author:
Funder
SEM
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9670881/9671056/09671257.pdf?arnumber=9671257
Reference6 articles.
1. Development of Spin-on Carbon Materials with High Planarization Performance for Multilayer Resist Process
2. Development of planarizing spin-on carbon material for high-temperature processes
3. Study on planarization performance of spin on hardmark;yun;2018 China Semiconductor Technology International Conference (CSTIC),0
4. Resist planarization for trench first dual damascene
5. Focus error reduction by photo-resist planarization in via-first dual damascene process
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