A manufacturable copper/low-k SiOC/SiCN process technology for 90 nm-node high performance eDRAM-Reference-Cited by-同舟云学术

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A manufacturable copper/low-k SiOC/SiCN process technology for 90 nm-node high performance eDRAM

Published: Issue: Volume: Page:
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Container-title:Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519)
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Author:

Higashi K.,Nakamura N.,Miyajima H.,Satoh S.,Kojima A.,Abe J.,Nagahata K.,Tatsumi T.,Tabuchi K.,Hasegawa T.,Kawashima H.,Arakawa S.,Matsunaga N.,Shibata H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7918/21830/01014873.pdf?arnumber=1014873

Cited by 36 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Adhesion enhancement and amine reduction using film redeposited at the interface of a stack of plasma-enhanced CVD dielectrics for Cu/low-k interconnects;Japanese Journal of Applied Physics;2019-01-23

2. Effect of TMCTS silylation treatments on crosslinking density of low-k zeolite porous silica film;Japanese Journal of Applied Physics;2019-01-14

3. Low-k Mesoporous Pure Silica Zeolite Synthesis with the Centrifugation Process of a Zeolite Precursor;ECS Journal of Solid State Science and Technology;2018

4. A Robust Low-$k$/Cu Dual Damascene Interconnect (DDI) With Sidewall Protection Layer (SPL);IEEE Transactions on Device and Materials Reliability;2011-03

5. Advanced BEOL Technology Overview;Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications;2009

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