Electromigration threshold in single-damascene copper interconnects with SiO/sub 2/ dielectrics-Reference-Cited by-同舟云学术

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Electromigration threshold in single-damascene copper interconnects with SiO/sub 2/ dielectrics

Published:2001 Issue: Volume: Page:
ISSN:
Container-title:Proceedings of the IEEE 2001 International Interconnect Technology Conference (Cat. No.01EX461)
language:
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Author:

Wang P.-C.,Filippi R.G.,Gignac L.M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/7399/20106/00930079.pdf?arnumber=930079

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analysis of critical-length data from Electromigration failure studies;Microelectronics Reliability;2011-09

2. Introduction;Power Distribution Networks with On-Chip Decoupling Capacitors;2010-11-06

3. Large-scale statistical analysis of early failures in Cu electromigration, Part II: Scaling behavior and short-length effects;Journal of Applied Physics;2010-07

4. Electromigration reliability issues in dual-damascene Cu interconnections;IEEE Transactions on Reliability;2002-12

5. Reliability and early failure in Cu/oxide dual-damascene interconnects;Journal of Electronic Materials;2002-10

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