Surface Electrode Ion Trap Developed and Improvement by Oxide- First- Metal-Last Approach for High Performance Quantum Computing-Reference-Cited by-同舟云学术

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Surface Electrode Ion Trap Developed and Improvement by Oxide- First- Metal-Last Approach for High Performance Quantum Computing

Published:2020-07-20 Issue: Volume: Page:
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Container-title:2020 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)
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Author:

Li H.Y.,Seit Wen Wei,Gilho Hwang,Tao J.,Lim Yu Dian,Zhao Peng,Tan Chuan Seng

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9260488/9260588/09260812.pdf?arnumber=9260812

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Q-factor improvement of surface ion trap fabrication;Quantum Computing, Communication, and Simulation IV;2024-03-13

2. Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors;2023 IEEE 25th Electronics Packaging Technology Conference (EPTC);2023-12-05

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