Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors-Reference-Cited by-同舟云学术

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Process Development and Integration on Si Substrate for Ion trap-based Quantum Processors

Published:2023-12-05 Issue: Volume: Page:253-256
ISSN:
Container-title:2023 IEEE 25th Electronics Packaging Technology Conference (EPTC)
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Author:

Li H. Y.¹,Liu Huihong Clarence²,Jaafar Norhanani¹,Ahmadi Morteza²,Kumar Mishra Dileep¹,Simonl Goh Chun Kiat¹,YanYan Zhou¹,Mukherjee Manas³,Jien Chui King¹

Affiliation:

1. Agency for Science Technology and Research (A*STAR),Institute of Microelectronics (IME)

2. National University of Singapore,Centre for Quantum Technologies (CQT)

3. Agency for Science Technology and Research (A*STAR),Institute of Materials Research and Engineering (IMRE)

Funder

National Research Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10457288/10457581/10457687.pdf?arnumber=10457687

Reference6 articles.

1. Optical barium ion qubit

2. Single-qubit universal classifier implemented on an ion-trap quantum device

3. Surface Electrode Ion Trap Developed and Improvement by Oxide- First- Metal-Last Approach for High Performance Quantum Computing

4. Design, Fabrication and Characterization of Surface Electrode Ion Trap Integrated with TSV

5. TSV-integrated surface electrode ion trap for scalable quantum information processing

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