Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters-Reference-Cited by-同舟云学术

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Characterization and application of 600 V normally-off GaN transistors in hard switching DC/DC converters

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Heckel Thomas,Frey Lothar,Zeltner Stefan

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6848890/6855954/06855976.pdf?arnumber=6855976

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices;IECON 2022 – 48th Annual Conference of the IEEE Industrial Electronics Society;2022-10-17

2. GaN-based power devices: Physics, reliability, and perspectives;Journal of Applied Physics;2021-11-14

3. Dynamic on-Resistance in GaN-on-Si HEMTs: Origins, Dependencies, and Future Characterization Frameworks;IEEE Transactions on Power Electronics;2020-06

4. Conceptual Design and Demonstration of an Automatic System for Extracting Switching Loss and Creating Data Library of Power Semiconductors;IEEE Open Journal of Power Electronics;2020

5. Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations;IEEE Transactions on Power Electronics;2017-07

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