Comprehensive Study on Dynamic on-resistance Evaluation Circuit for Power GaN HEMTs Devices
Author:
Affiliation:
1. Indian Institute of Technology Kanpur,Department of Electrical Engineering,Kanpur,India,208016
2. National Yang Ming Chiao Tung University,International College of Semiconductor Technology,Hsinchu,Taiwan,300093
Funder
National Science and Technology Council
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9968313/9968303/09969020.pdf?arnumber=9969020
Reference18 articles.
1. Lifetime evaluation for Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT) under practical switching operations
2. Power Loss Characterization and Modeling for GaN-Based Hard-Switching Half-Bridges Considering Dynamic on-State Resistance
3. A Test Circuit for GaN HEMTs Dynamic $R_{\text{ON}}$ Characterization in Power Electronics Applications
4. Dynamic on-State Resistance Test and Evaluation of GaN Power Devices Under Hard- and Soft-Switching Conditions by Double and Multiple Pulses
5. Test Setup for Dynamic ON-State Resistance Measurement of High- and Low-Voltage GaN-HEMTs Under Hard and Soft Switching Operations
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