A Test Circuit for GaN HEMTs Dynamic $R_{\text{ON}}$ Characterization in Power Electronics Applications-Reference-Cited by-同舟云学术

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A Test Circuit for GaN HEMTs Dynamic $R_{\text{ON}}$ Characterization in Power Electronics Applications

Published:2019-09 Issue:3 Volume:7 Page:1456-1464
ISSN:2168-6777
Container-title:IEEE Journal of Emerging and Selected Topics in Power Electronics
language:
Short-container-title:IEEE J. Emerg. Sel. Topics Power Electron.

Author:

Martinez Pedro Javier^ORCID,Miaja Pablo Fernandez,Maset Enrique^ORCID,Rodriguez Juan^ORCID

Funder

Spanish Government

Scholarship CEICE-GVA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Energy Engineering and Power Technology

Link

http://xplorestaging.ieee.org/ielx7/6245517/8782676/08694935.pdf?arnumber=8694935

Cited by 21 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Dynamic R _ON Free 1.2-kV Vertical GaN JFET;IEEE Transactions on Electron Devices;2024-01

2. H-Bridge-based Experimental Setup for GaN HEMTs' Thermal Cycling Testing;2023 IEEE International Conference on Power Electronics, Smart Grid, and Renewable Energy (PESGRE);2023-12-17

3. Physical Insights Into Nano-Second Time Scale Cyclic Stress Induced Dynamic R _on Behavior in AlGaN/GaN HEMTs—Part I;IEEE Transactions on Electron Devices;2023-12

4. Novel Dynamic ON-Resistance Measurement Circuit Topology, Operation, and Performance for High Voltage GaN Power HEMTs;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29

5. Stability, Reliability, and Robustness of GaN Power Devices: A Review;IEEE Transactions on Power Electronics;2023-07

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