Simulation studies for short-circuit current crowding of MOSFET-Mode IGBT
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6848890/6855954/06855990.pdf?arnumber=6855990
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Comparative study on the short-circuit withstand capability between the superjunction and conventional field-stop IGBTs;Microelectronics Reliability;2024-05
2. A 15V operated Shallow Trench IGBT(ST-IGBT) fabricated by low temperature process and optimized for 12inch wafers;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
3. Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs;Solid-State Electronics;2023-02
4. Comparison of Short-Circuit Safe Operating Areas Between the Conventional Field-Stop IGBT and the Superjunction Field-Stop IGBT;IEEE Journal of the Electron Devices Society;2022
5. 2D-TCAD Simulation Study of Capture Layer and Repellent Layer of Current Filament in Trench-Gate IGBTs;2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD);2021-09-27
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