Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs-Reference-Cited by-同舟云学术

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Investigation of effects of lateral boundary conditions on current filament movements in Trench-Gate IGBTs

Published:2023-02 Issue: Volume:200 Page:108537
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Suwa Takeshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference13 articles.

1. Field-Effect and Bipolar Power Transistaer Physics;Blicher,1981

2. The Physics of Instabilities in Solid State Electron Devices;Shaw,1992

3. Direct photo emission motion observation of current filaments in the IGBT under avalanche breakdown condition;Endo;Proc ISPSD,2016

4. Temporally- and spatially-resolved observations of current filament dynamics in insulated gate bipolar transistor chip during avalanche breakdown;Endo;IEEE Trans Device Mater Reliab,2019

5. Observation of current filaments in IGBTs with thermoreflectance microscopy;Bhojani;ISPSD,2018

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