Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability-Reference-Cited by-同舟云学术

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Ultra compact and high reliable SiC MOSFET power module with 200°C operating capability

Published:2012-06 Issue: Volume: Page:
ISSN:
Container-title:2012 24th International Symposium on Power Semiconductor Devices and ICs
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Author:

Horio Masafumi,Iizuka Yuji,Ikeda Yoshinari,Mochizuki Eiji,Takahashi Yoshikazu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6222389/6228999/06229028.pdf?arnumber=6229028

Cited by 20 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optimization of packaging process in Ag sintering for ultra-reliable SiC based power electronics;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

2. Improve the high-temperature reliability of epoxy encapsulation with copper substrates through a copper thiolate complex layer;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

3. Double-Side Cooled SiC MOSFET Power Modules With Sintered-Silver Interposers for a 100-kW/L Traction Inverter;IEEE Transactions on Power Electronics;2023-08

4. A Review of Select Patented Technologies for Cooling of High Heat Flux Power Semiconductor Devices;IEEE Transactions on Power Electronics;2023-06

5. Review of Double-Sided Cooling Power Modules for Driving Electric Vehicles;IEEE Transactions on Device and Materials Reliability;2023-06

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