A segmented output stage H-bridge IC with tunable gate driver
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6848890/6855954/06856012.pdf?arnumber=6856012
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. p-GaN HEMT Hard Switching Fault Type Short-Circuit Detection Based on the Gate Schottky-Barrier Leakage Current and Using a Dual-Channel Segmented CMOS buffer Gate-Driver;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28
2. A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression;IEEE Transactions on Power Electronics;2021-12
3. High Frequency, High Efficiency, and High Power Density GaN-Based LLC Resonant Converter: State-of-the-Art and Perspectives;Applied Sciences;2021-11-30
4. Full Custom Design of an Arbitrary Waveform Gate Driver With 10-GHz Waypoint Rates for GaN FETs;IEEE Transactions on Power Electronics;2021-07
5. A Segmented Gate Driver for E-mode GaN HEMTs with Simple Driving Strength Pattern Control;2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD);2020-09
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