A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications-Reference-Cited by-同舟云学术

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A wide bandgap silicon carbide (SiC) gate driver for high-temperature and high-voltage applications

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Lamichhane Ranjan R.,Ericsson Nance,Frank Shane,Britton Chuck,Marlino Laura,Mantooth Alan,Francis Matt,Shepherd Paul,Glover Michael,Perez Sonia,McNutt Ty,Whitaker Bret,Cole Zach

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6848890/6855954/06856064.pdf?arnumber=6856064

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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