Affiliation:
1. Fast SiC Semiconductor Inc.
2. National Tsing Hua University
Abstract
SiC MOSFETs are rarely used in low-power consumer applications because of their cost and gate driving circuitry requirement. In this work, a cost-efficient SiC MOSFET with a usable 10V of VGS is proposed. The proposed SiC MOSFET could enable low-power applications, which is around tens to hundreds of watt, to implement SiC MOSFETs. As a result, the thermal performance is better than the GaN solution thanks to the better thermal conductance of the SiC.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science