TCAD modeling of charge transport in HV-IC encapsulation materials-Reference-Cited by-同舟云学术

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TCAD modeling of charge transport in HV-IC encapsulation materials

Published:2014-06 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Imperiale I.,Reggiani S.,Gnani E.,Gnudi A.,Baccarani G.,Nguyen L.,Denison M.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6848890/6855954/06856073.pdf?arnumber=6856073

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs;IEEE Transactions on Electron Devices;2024-04

2. Understanding the role of encapsulation layers under wet conditions on the reliability of power devices;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

3. Anomalous increase of leakage current in epoxy moulding compounds under wet conditions;Solid-State Electronics;2023-10

4. TCAD Simulation Modeling of Mold Epoxy Resin Applied for Encapsulation of Power Devices;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Behavior of Space Charge in Polyimide and the Influence on Power Semiconductor Device Reliability;Polyimide for Electronic and Electrical Engineering Applications;2021-05-05

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