High threshold voltage p-GaN gate power devices on 200 mm Si-Reference-Cited by-同舟云学术

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High threshold voltage p-GaN gate power devices on 200 mm Si

Published:2013-05 Issue: Volume: Page:
ISSN:
Container-title:2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Jongseob Kim ,Sun-Kyu Hwang ,Injun Hwang ,Hyoji Choi ,Soogine Chong ,Hyun-Sik Choi ,Woochul Jeon ,Hyuk Soon Choi ,Jun Yong Kim ,Young Hwan Park ,Kyung Yeon Kim ,Jong-Bong Park ,Jong-Bong Ha ,Ki Yeol Park ,Jaejoon Oh ,Jai Kwang Shin ,U-In Chung ,In-Kyeong Yoo ,Kinam Kim

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6684693/6694389/06694412.pdf?arnumber=6694412

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Threshold voltage shift model for p-GaN gate enhancement mode HEMT;Microelectronics Reliability;2023-08

2. Threshold Voltage Analysis of E-mode Recessed p-GaN Gate HEMT-A Simulation Based Study;2023 IEEE Devices for Integrated Circuit (DevIC);2023-04-07

3. A Pathway to Improve the Reliability of p-GaN Gate HEMTs through Buffer Hole Accumulation;2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2022-05-22

4. N₂O plasma treatment effect on reliability of p-GaN gate AlGaN/GaN HEMTs;Applied Physics Letters;2022-03-28

5. Estimation of Short Circuit Capability of GaN HEMTs Using Transient Measurement;IEEE Electron Device Letters;2021-08

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