Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions-Reference-Cited by-同舟云学术

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Gate oxide reliability of 4H-SiC V-groove trench MOSFET under various stress conditions

Published:2016-06 Issue: Volume: Page:
ISSN:
Container-title:2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD)
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Author:

Hiyoshi Toru,Uchida Kosuke,Sakai Mitsuhiko,Furumai Masaki,Tsuno Takashi,Mikamura Yasuki

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7509008/7520753/07520772.pdf?arnumber=7520772

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Design analysis of 4H-SiC MOSFET for high power application;Physica Scripta;2024-09-03

2. Power Electronics Revolutionized: A Comprehensive Analysis of Emerging Wide and Ultrawide Bandgap Devices;Micromachines;2023-10-31

3. Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress;2023 24th International Conference on Electronic Packaging Technology (ICEPT);2023-08-08

4. Study of Vertical Capacitance in an n-Type 4H-SiC Stepped Thick-Oxide Trench MOS Structure;IEEE Transactions on Electron Devices;2022-08

5. Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview;IEEE Journal of Emerging and Selected Topics in Power Electronics;2022-02

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