Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress-Reference-Cited by-同舟云学术

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Investigation on Transient Failure Mode of Asymmetric Trench Gate SiC MOSFET Under Single-Pulse Avalanche Stress

Published:2023-08-08 Issue: Volume: Page:1-6
ISSN:
Container-title:2023 24th International Conference on Electronic Packaging Technology (ICEPT)
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Author:

Wang Shaogang¹,Tan Yanlong²,Liu Xu³,Li Shizhen³,Liu Ke³,Yuan Wucheng³,Lin Tao⁴,Zhang Guoqi¹,French Paddy¹,Ye Huaiyu³,Tan Chunjian³

Affiliation:

1. Delft University of Technology,Faculty of EEMCS,Delft,The Netherlands,2628 CD

2. Research Institute of Fudan University in Ningbo,Ningbo,China

3. Southern University of Science and Technology,School of Microelectronics,Shenzhen,China,518055

4. PhasedCom Communication Technology Co., Ltd.,Shenzhen,China

Funder

Shenzhen Fundamental Research Program

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10491594/10491891/10492291.pdf?arnumber=10492291

Reference33 articles.

1. The Current Status and Trends of 1,200-V Commercial Silicon-Carbide MOSFETs: Deep Physical Analysis of Power Transistors From a Designer’s Perspective

2. Silicon carbide power MOSFETs: Breakthrough performance from 900 V up to 15 kV

3. High Switching Performance of 1700V, 50A SiC Power MOSFET over Si IGBT/BiMOSFET for Advanced Power Conversion Applications

4. Performance comparison and device analysis Between Si IGBT and SiC MOSFET

5. Static and dynamic performance characterization and comparison of 15 kV SiC MOSFET and 15 kV SiC n-IGBTs

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