Investigation of carrier streaming effect for the low spike fast IGBT turn-off-Reference-Cited by-同舟云学术

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Investigation of carrier streaming effect for the low spike fast IGBT turn-off

Published: Issue: Volume: Page:
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Container-title:2006 IEEE International Symposium on Power Semiconductor Devices & IC's
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Author:

Onozawa Y.,Otsuki M.,Seki Y.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11050/34863/01666099.pdf?arnumber=1666099

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Adjustable Gate Driver Based on the Optimization of Switching Transient Performances;IEEE Access;2024

2. Evaluation of the turn‐off transient controllability for high‐power IGBT modules;IET Power Electronics;2022-02-11

3. A low-loss variable-doped trench-insulated gate bipolar transistor with reduced on-state voltage;Semiconductor Science and Technology;2021-05-28

4. High voltage trench insulated gate bipolar transistor with MOS structure for self-adjustable hole extraction;Semiconductor Science and Technology;2020-09-29

5. Surface Buffer IGBT for High Total Performance;IEEE Transactions on Electron Devices;2020-08

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