A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls-Reference-Cited by-同舟云学术

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A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls

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Container-title:2006 IEEE International Symposium on Power Semiconductor Devices & IC's
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Author:

Shimoyama K.,Takei M.,Souma Y.,Yajima A.,Kajiwara S.,Nakazawa H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/11050/34863/01666063.pdf?arnumber=1666063

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Emerging Local Annealing Method for Simultaneous Crystallization and Activation in Xtacking 3-D NAND Flash;IEEE Transactions on Semiconductor Manufacturing;2023-02

2. Numerical Analysis for a P-Drift Region N-IGBT With Enhanced Dynamic Electric Field Modulation Effect;IEEE Transactions on Electron Devices;2022-06

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