An Emerging Local Annealing Method for Simultaneous Crystallization and Activation in Xtacking 3-D NAND Flash
Author:
Affiliation:
1. Institute of Microelectronics of the Chinese Academy of Sciences, Beijing, China
2. R&D Engineering Center, Yangtze Memory Technologies Company Ltd., Wuhan, China
Funder
National Science and Technology Major Project of China
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Industrial and Manufacturing Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/66/10036056/09987516.pdf?arnumber=9987516
Reference22 articles.
1. PN Junction Formation for High-Performance Insulated Gate Bipolar Transistors (IGBT); Double-Pulsed Green Laser Annealing Technique
2. Laser Annealing of Amorphous Germanium on Silicon–Germanium Source/Drain for Strain and Performance Enhancement in pMOSFETs
3. Managing annealing pattern effects in 45nm low power CMOS technology
4. A New Isolation Technique for Reverse Blocking IGBT with Ion Implantation and Laser Annealing to Tapered Chip Edge Sidewalls
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