A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control-Reference-Cited by-同舟云学术

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A GaN HEMT driver IC with programmable slew rate and monolithic negative gate-drive supply and digital current-mode control

Published:2015-05 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD)
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Author:

Rose M.,Wen Y.,Fernandes R.,Van Otten R.,Bergveld H. J.,Trescases O.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7118854/7123286/07123464.pdf?arnumber=7123464

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Three-Phase Motor Inverter and Current Sensing GaN Power IC;Sensors;2023-07-19

2. A Novel Approach for a Distributed TCM Modulator;2023 11th International Conference on Power Electronics and ECCE Asia (ICPE 2023 - ECCE Asia);2023-05-22

3. An Integrated GaN Overcurrent Protection Circuit for Power HEMTs Using SenseHEMT;IEEE Transactions on Power Electronics;2022-08

4. Cascoded GaN half-bridge with 17-MHz wide-band galvanically isolated current sensor;Japanese Journal of Applied Physics;2021-12-17

5. A Smart Gate Driver IC for GaN Power HEMTs With Dynamic Ringing Suppression;IEEE Transactions on Power Electronics;2021-12

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