Gallium Nitride based 3D integrated non-isolated point of load module-Reference-Cited by-同舟云学术

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Gallium Nitride based 3D integrated non-isolated point of load module

Published:2012-02 Issue: Volume: Page:
ISSN:
Container-title:2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC)
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Author:

Reusch David,Gilham David,Su Yipeng,Lee Fred C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6158725/6165780/06165796.pdf?arnumber=6165796

Cited by 54 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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4. Application-Oriented Characterization of Thermally Optimized, Asymmetrical Single Chip Packages for 100 V GaN HEMTs;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Monolithically Integrated GaN Gate Drivers– A Design Guide;IEEE Open Journal of Power Electronics;2023

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