Author:
Peng Kang,Eskandari Soheila,Santi Enrico
Cited by
29 articles.
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1. First results on 1.2 kV SiC MOSFET body diode robustness tests;Microelectronics Reliability;2023-12
2. Investigation of the limit conditions of SiC MOSFET body diode reverse recovery;2023 IEEE Energy Conversion Congress and Exposition (ECCE);2023-10-29
3. Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode;2023 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS);2023-10-16
4. Static and Dynamic Characterization of a 1.2 kV SiC MOSFET in Third Quadrant;2023 25th European Conference on Power Electronics and Applications (EPE'23 ECCE Europe);2023-09-04
5. Silicon Carbide Power Devices: Progress and Future Outlook;IEEE Journal of Emerging and Selected Topics in Power Electronics;2023-06