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Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer

  • Published:2014-08 Issue:8 Volume:61 Page:2774-2778
  • ISSN:0018-9383
  • Container-title:IEEE Transactions on Electron Devices
  • language:
  • Short-container-title:IEEE Trans. Electron Devices

Author:

Quang Ho Luc ,Chang Edward Yi,Hai Dang Trinh ,Yueh Chin Lin ,Hong Quan Nguyen ,Yuen Yee Wong ,Huy Binh Do ,Salahuddin Sayeef,Hu Chenming Calvin

Funder

Ministry of Science and Technology (MOST), NCTU-UCB I-RiCE Program, Taiwan

MOST

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Cited by 38 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Inversion-mode InGaAs FinFETs for RF applications;Applied Physics Express;2023-09-01

2. High Performance Inversion-Mode In0.53Ga0.47As FinFETs for Logic and RF Applications;IEEE Transactions on Nanotechnology;2023

3. Perfecting high-κ/Ge and /InGaAs interfaces – push for ultimate CMOS and emerging cryogenic electronic devices;2022 IEEE 16th International Conference on Solid-State & Integrated Circuit Technology (ICSICT);2022-10-25

4. Electrical Characteristics of In0.53Ga0.47As Gate-All-Around MOSFETs With Different Nanowire Shapes;IEEE Transactions on Electron Devices;2022-08

5. Comparative Analysis of Different Characteristics of a Double Gate MOS Capacitor;2022 6th International Conference on Devices, Circuits and Systems (ICDCS);2022-04-21
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