Temperature-Dependent Dynamic <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ </tex-math></inline-formula> in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage-Reference-Cited by-同舟云学术

Temperature-Dependent Dynamic $R_{\mathrm {\mathrm{{\scriptstyle ON}}}}$ in GaN-Based MIS-HEMTs: Role of Surface Traps and Buffer Leakage

Published:2015-03 Issue:3 Volume:62 Page:782-787
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Meneghini Matteo,Vanmeerbeek Piet,Silvestri Riccardo,Dalcanale Stefano,Banerjee Abhishek,Bisi Davide,Zanoni Enrico,Meneghesso Gaudenzio,Moens Peter

Funder

European Commission within the European Nanoelectronics Initiative Advisory Council Project entitled Energy Efficient Converters using GaN Power Devices

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/7046469/07035086.pdf?arnumber=7035086

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