New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance-Reference-Cited by-同舟云学术

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New Method to Analyze the Shift of Floating Gate Charge and Generated Tunnel Oxide Trapped Charge Profile in NAND Flash Memory by Program/Erase Endurance

Published:2015-01 Issue:1 Volume:62 Page:114-120
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shirota Riichiro,Yang Bo-Jun,Chiu Yung-Yueh,Chen Hsuan-Tse,Ng Seng-Fei,Wang Pin-Yao,Chang Jung-Ho,Kurachi Ikuo

Funder

National Science Council of Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6994894/06951431.pdf?arnumber=6951431

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Endurance Characteristics in 3-D NAND Flash Memory With Trap Profile Analysis;IEEE Transactions on Electron Devices;2024-03

2. Endurance and Data Retention Characteristics of 0.15 μm EEPROM cells;2023 IEEE 23rd International Conference on Nanotechnology (NANO);2023-07-02

3. Investigation of endurance degradation for 3-D charge trap NAND flash memory with bandgap-engineered tunneling oxide;IEICE Electronics Express;2022-12-25

4. Effects of Hydrogen on Endurance Characteristics in NAND Flash Memories;ECS Advances;2022-12-01

5. Technique for Profiling the Cycling-Induced Oxide Trapped Charge in NAND Flash Memories;Electronics;2021-10-13

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