Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design-Reference-Cited by-同舟云学术

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Asymmetric Gate Schottky-Barrier Graphene Nanoribbon FETs for Low-Power Design

Published:2014-12 Issue:12 Volume:61 Page:4000-4006
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Gholipour Morteza,Masoumi Nasser,Chen Ying-Yu Christine,Deming Chen ,Pourfath Mahdi

Funder

NSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6965486/06963472.pdf?arnumber=6963472

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An efficient GNRFET-based circuit design of ternary half-adder;AEU - International Journal of Electronics and Communications;2023-10

2. Simulation-Based Recommendations for Digital Circuits Design Using Schottky-Barrier-Type GNRFET;ECS Journal of Solid State Science and Technology;2022-07-01

3. Graphene Structures-Based 2D Nanotransistors (Review);Journal of Communications Technology and Electronics;2021-09

4. A Novel Method for Performance Enhancement of PV Module Using Graphene;Computational and Experimental Methods in Mechanical Engineering;2021-08-31

5. Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design;International Journal of Circuit Theory and Applications;2021-07-26

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