Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs-Reference-Cited by-同舟云学术

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Published:2014-05 Issue:5 Volume:61 Page:1316-1320
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Puzyrev Yevgeniy,Paccagnella Alessandro,Pantelides Sokrates T.,Mukherjee Shubhajit,Chen Jin,Roy Tania,Silvestri Marco,Schrimpf Ronald D.,Fleetwood Daniel M.,Singh Jasprit,Hinckley John M.

Funder

Office of Naval Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/6802373/06767107.pdf?arnumber=6767107

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