AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE-Reference-Cited by-同舟云学术

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AlInP-GaInP-GaAs UV-enhanced photovoltaic detectors grown by gas source MBE

Published:2005-06 Issue:6 Volume:17 Page:1265-1267
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Zhang Y.G.,Gu Y.,Zhu C.,Li A.Z.,Liu T.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/68/30891/01432797.pdf?arnumber=1432797

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The magic of III-Vs;Earth and Space: From Infrared to Terahertz (ESIT 2022);2023-01-31

2. Impact of threading dislocation density on metamorphic In_xGa_1-xAs and In_zGa_1-zP p-i-n photodetectors on GaAs;Optical Components and Materials IX;2012-02-01

3. Gas source MBE grown Al0.52In0.48P photovoltaic detector;Journal of Crystal Growth;2011-05

4. GaInP–AlInP–GaAs Blue Photovoltaic Detectors With Narrow Response Wavelength Width;IEEE Photonics Technology Letters;2010-06

5. Gas source MBE growth and doping characteristics of AlInP on GaAs;Materials Science and Engineering: B;2006-07

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