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Gas source MBE grown Al0.52In0.48P photovoltaic detector

  • Published:2011-05 Issue:1 Volume:323 Page:501-503
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Li C.,Zhang Y.G.,Gu Y.,Wang K.,Li A.Z.,Li Hsby,Shao X.M.,Fang J.X.

Funder

National Basic Research Program of China

Natural Science Foundation of Shanghai, China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Measurement of the electron–hole pair creation energy in Al0.52In0.48P using X-ray radiation;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2018-01

2. Visible Light Communication Receiving Technology;LED-Based Visible Light Communications;2018

3. Analysis of dark currents and deep level traps in InP- and GaAs-based In0.83Ga0.17As photodetectors;Journal of Crystal Growth;2017-11

4. GaAs-based In0.83Ga0.17As photodetector structure grown by gas source molecular beam epitaxy;Journal of Crystal Growth;2014-05
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